Effect of Multiplication and Absorption Layers Width on Avalanche Multiplication Gain in InGaAs/InP Avalanche Photodiode
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چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: International Journal of Engineering & Technology
سال: 2018
ISSN: 2227-524X
DOI: 10.14419/ijet.v7i4.35.22909